BG 3230 E6327 Infineon Technologies, BG 3230 E6327 Datasheet - Page 4

• Manufacturer Part Number: BG 3230 E6327
• Description: MOSFET N-CH DUAL 8V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3230 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3230E6327XT; SP000013594

Total power dissipation P
Gate 1 forward transconductance
g
V
fs
DS
mW
= ƒ(I
mS
300
200
150
100
= 5V, V
50
35
25
20
15
10
0
5
0
0
0
D
)
20
G2S
4
40
= Parameter
8
60
12
3V
80
tot
16
100
= ƒ(T
3.5V
20
120 °C
S
mA
)
T
I
4V
D
S
150
26
4
Output characteristics I
Drain current I
V
V
DS
G2S
mA
mA
= 5V
14
12
11
10
26
22
20
18
16
14
12
10
= Parameter
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
0
1
0.4
2
D
0.8
3
= ƒ(V
BG3230_BG3230R
4
1.2
G1S
5
D
1.6
)
= ƒ(V
6
7
2
2005-11-03
4V
DS
8
)
3.5V
V
V
V
3V
2.5V
2V
V
DS
G1S
2V
1.9V
1.8V
1.7V
1.6V
2.8
10