BFG325/XR,215 NXP Semiconductors, BFG325/XR,215 Datasheet - Page 4

• Manufacturer Part Number: BFG325/XR,215
• Description: TRANS NPN 6V 35MA 14GHZ SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BFG325/XR,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1.1dB @ 2GHz
• Gain: 18.3dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 15mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 210 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1977-2; 934057939215; BFG325/XR T/R

Philips Semiconductors
9397 750 14247
Product data sheet
Fig 1. Power derating curve
Fig 3. Collector-base capacitance as a function of
(mW)
C
(pF)
P
CBS
0.34
0.30
0.26
0.22
tot
250
200
150
100
50
0
I
collector-base voltage; typical values
C
0
0
= 0 mA; f = 1 MHz.
1
50
2
100
3
150
4
T
001aac147
001aac149
sp
V
CB
( C)
(V)
Rev. 01 — 2 February 2005
200
5
Fig 2. Collector current as a function of
Fig 4. Gain as a function of frequency; typical values
(mA)
(dB)
I
G
C
35
30
25
20
15
10
40
30
20
10
5
0
0
collector-emitter voltage; typical values
I
10
C
0
= 15 mA; V
1
CE
10
NPN 14 GHz wideband transistor
2
= 3 V.
2
s
21
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2
MSG
3
I
B
= 350 A
BFG325/XR
300 A
250 A
200 A
150 A
100 A
50 A
10
4
3
V
f (MHz)
CE
001aac148
001aac150
5
G
(V)
max
10
6
4
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