BFG325/XR,215 NXP Semiconductors, BFG325/XR,215 Datasheet - Page 8

• Manufacturer Part Number: BFG325/XR,215
• Description: TRANS NPN 6V 35MA 14GHZ SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BFG325/XR,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1.1dB @ 2GHz
• Gain: 18.3dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 15mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 210 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1977-2; 934057939215; BFG325/XR T/R

Philips Semiconductors
9397 750 14247
Product data sheet
Table 9:
Designation
C
C
C
C_base_pad
C_emitter_pad
L
L
L
L
L
Fig 9. Package equivalent circuit of SOT143R
B
E
1
2
3
CB
BE
CE
List of components; see
L
1
Rev. 01 — 2 February 2005
C
C
CB
BE
L
B
CHIP
Value
17
84
191
67
142
0.95
0.40
0.12
0.21
0.06
Figure 9
C_base_pad
BJT1
L
L
L
2
E
3
NPN 14 GHz wideband transistor
Unit
fF
fF
fF
fF
fF
nH
nH
nH
nH
nH
C_emitter_pad
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BFG325/XR
001aac155
C
CE
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