BFG325/XR,215 NXP Semiconductors, BFG325/XR,215 Datasheet - Page 8
![TRANS NPN 6V 35MA 14GHZ SOT143R](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG325/XR,215
Manufacturer Part Number
BFG325/XR,215
Description
TRANS NPN 6V 35MA 14GHZ SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG325XR215.pdf
(12 pages)
Specifications of BFG325/XR,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.1dB @ 2GHz
Gain
18.3dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 15mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
14000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
210 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1977-2
934057939215
BFG325/XR T/R
934057939215
BFG325/XR T/R
Philips Semiconductors
9397 750 14247
Product data sheet
Table 9:
Designation
C
C
C
C_base_pad
C_emitter_pad
L
L
L
L
L
Fig 9. Package equivalent circuit of SOT143R
B
E
1
2
3
CB
BE
CE
List of components; see
L
1
Rev. 01 — 2 February 2005
C
C
CB
BE
L
B
CHIP
Value
17
84
191
67
142
0.95
0.40
0.12
0.21
0.06
Figure 9
C_base_pad
BJT1
L
L
L
2
E
3
NPN 14 GHz wideband transistor
Unit
fF
fF
fF
fF
fF
nH
nH
nH
nH
nH
C_emitter_pad
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BFG325/XR
001aac155
C
CE
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