BFG325/XR,215 NXP Semiconductors, BFG325/XR,215 Datasheet - Page 5
![TRANS NPN 6V 35MA 14GHZ SOT143R](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG325/XR,215
Manufacturer Part Number
BFG325/XR,215
Description
TRANS NPN 6V 35MA 14GHZ SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG325XR215.pdf
(12 pages)
Specifications of BFG325/XR,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.1dB @ 2GHz
Gain
18.3dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 15mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
14000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
210 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1977-2
934057939215
BFG325/XR T/R
934057939215
BFG325/XR T/R
Philips Semiconductors
9397 750 14247
Product data sheet
Fig 5. Common emitter input reflection coefficient (s
Fig 6. Common emitter forward transmission coefficient (s
V
V
CE
CE
= 3 V; I
= 3 V; I
180
180
C
C
= 15 mA; Z
= 15 mA.
50
0
Rev. 01 — 2 February 2005
40 MHz
135
135
135
135
0.2
0.2
40
o
0.2
= 50 .
30
0.5
0.5
3 GHz
20
0.5
10
90
90
90
90
1
0
1
1
3 GHz
2
11
NPN 14 GHz wideband transistor
); typical values
2
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
40 MHz
21
5
); typical values
45
45
45
45
10
001aac151
001aac152
BFG325/XR
5
5
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
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