BFR93AR,215 NXP Semiconductors, BFR93AR,215 Datasheet - Page 2

• Manufacturer Part Number: BFR93AR,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93AR,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40 @ 30 mA @ 5 V
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933653660215; BFR93AR T/R; BFR93AR T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BFR93AR_1
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Pin
1
2
3
Type number
BFR93AR
Type number
BFR93AR
Symbol
V
V
V
I
P
T
T
C
stg
j
CBO
CEO
EBO
tot
T
sp
is the temperature at the solder point of the collector pin.
Pinning
Ordering information
Marking
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Description
emitter
base
collector
Package
Name
-
Rev. 01 — 30 November 2006
Description
plastic surface-mounted package; 3 leads
Marking code
*R5
Conditions
open emitter
open base
open collector
T
sp
95 C; see
Simplified outline
Figure 2
1
NPN 6 GHz wideband transistor
3
Description
* = p : made in Hong Kong
* = w : made in China
2
[1]
BFR93AR
Min
-
-
-
-
-
-
Symbol
65
© NXP B.V. 2006. All rights reserved.
Max
15
12
2
35
300
2
150
175
sym026
Version
SOT23
3
1
Unit
V
V
V
mA
mW
2 of 13
C
C