BFR93AR,215 NXP Semiconductors, BFR93AR,215 Datasheet - Page 8

• Manufacturer Part Number: BFR93AR,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93AR,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40 @ 30 mA @ 5 V
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933653660215; BFR93AR T/R; BFR93AR T/R

NXP Semiconductors
BFR93AR_1
Product data sheet
Fig 16. Common emitter input reflection coefficient (S
Fig 17. Common emitter forward transmission coefficient (S
I
I
C
C
= 30 mA; V
= 30 mA; V
CE
CE
= 8 V; Z
= 8 V; T
+ j
180
O
amb
j
= 50 ;T
0
0.2
0.2
150
= 25 C.
150
amb
0.5
0.5
0.2
= 25 C.
120
100
120
1200
Rev. 01 — 30 November 2006
800
0.5
1200 MHz
500
1000
1000
200
200
100 MHz
11
90
)
90
1
1
1
500
800
21
)
10
2
60
60
20
2
2
5
10
mbb259
30
30
mbb261
NPN 6 GHz wideband transistor
30
5
5
10
10
0
+
BFR93AR
© NXP B.V. 2006. All rights reserved.
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