BFR93AR,215 NXP Semiconductors, BFR93AR,215 Datasheet - Page 4

• Manufacturer Part Number: BFR93AR,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93AR,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40 @ 30 mA @ 5 V
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933653660215; BFR93AR T/R; BFR93AR T/R

NXP Semiconductors
BFR93AR_1
Product data sheet
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
Fig 2. Power derating curve
(mW)
P
tot
400
300
200
100
0
L1 = L3 = 5 H choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
0
50
100
75
input
V
BB
150
1.5 nF
1 nF
T
sp
L1
mra702
( C)
Rev. 01 — 30 November 2006
10 k
200
270
3.3 pF
L2
Fig 3. DC current gain as a function of collector
1 nF
L3
h
FE
DUT
120
18
80
40
0
V
current
1.5 nF
0
CE
= 5 V; T
0.68 pF
1 nF
mbb251
j
V
= 25 C.
CC
output
10
75
NPN 6 GHz wideband transistor
20
BFR93AR
I
© NXP B.V. 2006. All rights reserved.
C
(mA)
mcd087
30
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