BFR93AR,215 NXP Semiconductors, BFR93AR,215 Datasheet - Page 6

TRANS NPN 35MA 12V 6GHZ SOT23

BFR93AR,215

Manufacturer Part Number
BFR93AR,215
Description
TRANS NPN 35MA 12V 6GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR93AR,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40 @ 30 mA @ 5 V
Dc Current Gain Hfe Max
40 @ 30mA @ 5V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
6000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.035 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933653660215
BFR93AR T/R
BFR93AR T/R
NXP Semiconductors
BFR93AR_1
Product data sheet
Fig 8. Gain as a function of frequency; typical values
Fig 10. Circles of constant noise figure; typical values
gain
(dB)
(mS)
B
S
50
40
20
20
40
40
30
20
10
0
0
I
I
C
C
10
0
= 10 mA; V
= 4 mA; V
1.6
MSG
20
CE
2.0
CE
G
10
= 8 V; f = 800 MHz; T
UM
2
= 8 V.
2.5
40
3.0
10
3
60
f (MHz)
NF = 3.5 dB
amb
G
G
max
S
mbb253
= 25 C.
mbb257
(mS)
Rev. 01 — 30 November 2006
10
80
4
Fig 9. Gain as a function of frequency; typical values
Fig 11. Circles of constant noise figure; typical values
gain
(dB)
(mS)
B
S
50
30
20
10
10
20
30
40
30
20
10
0
0
I
I
10
C
C
0
= 30 mA; V
= 4 mA; V
MSG
CE
2.3
CE
10
= 8 V; f = 800 MHz; T
20
2
G
= 8 V.
NPN 6 GHz wideband transistor
UM
2.5
3.0
10
40
3
3.5
BFR93AR
G
max
G
NF = 4.0 dB
f (MHz)
© NXP B.V. 2006. All rights reserved.
amb
S
mbb254
(mS)
= 25 C.
mbb258
10
60
4
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