BFP 420 E6433 Infineon Technologies, BFP 420 E6433 Datasheet - Page 4

• Manufacturer Part Number: BFP 420 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 420 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 21dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP420E6433XT; SP000011036

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent
circuit both leads are combined in one electrical connection
Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
B
L
BO
0.20045
28.383
2.0518
19.705
1.1724
3.4849
1.8063
6.7661
1
0.81696
2.3249
0
3
C
BE
L
BI
B’
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
Transistor
Chip
C
CB
E’
E
L
L
EI
EO
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
C’
C’-E’-
Diode
L
CI
72.534
0.48731
7.8287
0.69141
8.5757
0.31111
0.8051
0.42199
0
0.30232
0
0
0.73234
4
C
CE
L
CO
EHA07389
-
A
-
mA
-
V
-
deg
-
fF
-
C
L
L
L
L
L
L
C
C
C
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
Valid up to 6GHz
BI
BO
EI
EO
CI
CO
BE
CB
CE
=
=
=
=
=
=
=
=
=
0.47
0.53
0.23
0.05
0.56
0.58
136
6.9
134
1.2432
19.049
1.3325
0.019237
0.72983
0.10105
0.46576
0.23794
234.53
0.3
0.75
1.11
300
2007-04-20
BFP420
nH
nH
nH
nH
nH
nH
fF
fF
fF
-
fA
-
fA
mA
-
V
fF
-
V
eV
K