BFP 420 E6433 Infineon Technologies, BFP 420 E6433 Datasheet - Page 8

• Manufacturer Part Number: BFP 420 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 420 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 21dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP420E6433XT; SP000011036

Noise figure F =
V
Noise figure F =
V
CE
CE
dB
dB
= 2 V, Z
2.5
1.5
0.5
= 2 V, Z
1.5
0.5
4
3
2
1
0
3
2
1
0
0
0
4
1
S
S
8
= Z
= Z
12
Sopt
Sopt
2
( I
( f )
C
16
)
3
20
IC = 20 mA
IC = 5 mA
24
4
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
28
GHz
32 mA 38
I
f
C
6
8
Noise figure F =
V
Source impedance for min.
noise figure vs. frequency
V
CE
CE
dB
= 2 V, f = 1.8 GHz
1.5
0.5
= 2 V, I
0
3
2
1
0
+j10
-j10
0
4
+j25
10
-j25
C
= 5 mA / 20 mA
8
4GHz
5GHz
25
3GHz
12
( I
6GHz
C
2.4GHz
16
)
50
+j50
-j50
1.8GHz
20
100
0.9GHz
24
2007-04-20
ZS = 50 Ohm
ZS = ZSopt
0.45GHz
28 mA
BFP420
+j100
-j100
I
C
36