BFP 420 E6433 Infineon Technologies, BFP 420 E6433 Datasheet - Page 7

• Manufacturer Part Number: BFP 420 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 420 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 21dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP420E6433XT; SP000011036

Transition frequency f
f = 2 GHz
V
Power gain G
V
f = parameter in GHz
CE
CE
GHz
dB
= parameter in V
= 2V
30
24
22
20
18
16
14
12
10
30
24
22
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
4
5
8
ma
10
12
, G
15
ms
16
=
T
20
20
= ( I
24
( I
25
C
C
)
)
28
30
32 mA
2 to 4
mA
I
I
C
C
1.5
1
0.75
0.5
0.9
1.8
2.4
3
4
5
6
40
40
7
Power gain G
V
Power gain G
I
f = parameter in GHz
C
CE
= 20 mA
dB
44
40
36
32
28
24
20
16
12
= 2 V, I
8
4
0
30
24
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0.5
1
C
|S
G
21
= 20 mA
ms
ma
|
ma
1
2
, G
, G
2
1.5
ms
ms
f [GHz]
2
, | S
3
=
2.5
21
( V
|² =
4
CE
3
2007-04-20
G
ma
)
3.5
( f )
BFP420
5
V
V
CE
0.9
1.8
2.4
3
4
5
6
6
4.5