BFP 420 E6433 Infineon Technologies, BFP 420 E6433 Datasheet - Page 6

• Manufacturer Part Number: BFP 420 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 420 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 21dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP420E6433XT; SP000011036

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
200
160
140
120
100
80
60
40
20
-
0
1
0
10
0
/ P
-7
totDC
20
10
-6
=
40
10
-5
( t
p
60
)
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
80
10
tot
-3
100
= ( T
10
-2
120 °C
S
)
T
t
s
p
S
150
10
0
6
Permissible Pulse Load R
Collector-base capacitance C
f = 1MHz
K/W
0.15
0.05
10
10
10
pF
0.3
0.2
0.1
0
3
2
1
10
0
-7
10
-6
1
10
-5
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-4
2
10
thJS
-3
2007-04-20
10
cb
=
V
-2
= ( V
BFP420
( t
t
V
p
s
p
)
CB
CB
10
4
)
0