BFP 620F E7764 Infineon Technologies, BFP 620F E7764 Datasheet - Page 6

• Manufacturer Part Number: BFP 620F E7764
• Description: TRANSISTOR RF NPN 2.3V TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 620F E7764

• Package / Case: TSFP-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 185mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110 @ 50mA @ 1.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 65000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 2.3 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 185 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP620FE7764XT; SP000012989

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
f = Parameter in GHz
CE
CE
dBm
dB
= parameter, f =1.8GHz
= 1.5V
30
20
15
10
30
26
24
22
20
18
16
14
12
10
-5
5
0
8
6
0
0
S
10
10
=Z
L
20
20
ma
=50 )
, G
30
30
ms
40
40
= (I
50
50
0.8V
C
)
60
60
3
= (I
70 mA
70 mA
C
I
I
)
C
C
2.3V
1.7V
1.4V
1.1V
0.9
1.8
2.4
3
4
5
6
90
90
6
Transition frequency f
f = 1GHz
V
Power Gain G
|S
V
CE
CE
21
GHz
|² = f (f)
dB
= Parameter in V
= 1.5V, I
70
60
55
50
45
40
35
30
25
20
15
10
50
40
35
30
25
20
15
10
5
0
5
0
0
10
Gms
|S21|²
1
20
C
ma
= 50mA
0.3
30
, G
2
40
ms
T
50
=
3
= (I
60
(f),
C
4
2007-04-20
)
70
Gma
BFP620F
GHz
80 mA 100
I
f
1 to 2.3
0.8
0.5
C
6