BFP 620F E7764 Infineon Technologies, BFP 620F E7764 Datasheet - Page 7

• Manufacturer Part Number: BFP 620F E7764
• Description: TRANSISTOR RF NPN 2.3V TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 620F E7764

• Package / Case: TSFP-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 185mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110 @ 50mA @ 1.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 65000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 2.3 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 185 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP620FE7764XT; SP000012989

Power gain G
I
f = Parameter in GHz
Noise figure F =
V
C
CE
= 50mA
2.5
1.5
0.5
dB
= 1.5V, f = 1.8 GHz
3
2
1
0
30
24
20
16
12
-4
0
8
4
0
0.2
10
0.6
20
ma
, G
1
30
(I
ms
C
I
c
)
40
[mA]
=
1.4
(V
50
1.8
CE
Z
Z
S
S
60
)
= 50
= Z
Sopt
V
70
V
0.9
1.8
2.4
3
4
5
6
CE
80
2.6
7
Noise figure F =
V
Noise figure F =
V
CE
CE
2.5
1.5
0.5
2.5
1.5
0.5
= 1.5V, Z
3
2
1
0
= 1.5V, Z
2
1
0
0
1
10
2
S
S
20
= Z
= Z
3
30
Sopt
Sopt
(I
(f)
I
I
C
C
C
= 50mA
= 5.0mA
f [GHz]
I
c
)
40
[mA]
4
50
5
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
2007-04-20
60
BFP620F
6
70
80
7