BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 3

• Manufacturer Part Number: BC847DS,115
• Description: TRANS NPN/NPN GP 45V 6TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC847DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063469115

NXP Semiconductors
6. Thermal characteristics
BC847DS_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
[1]
Symbol
T
T
T
Symbol
Per transistor
R
R
Per device
R
Fig 1.
j
amb
stg
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Per device: Power derating curve SOT457 (SC-74)
Limiting values
Thermal characteristics
Parameter
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
(mW)
P
Rev. 01 — 25 August 2009
tot
500
400
300
200
100
0
…continued
75
25
45 V, 100 mA NPN/NPN general-purpose transistor
Conditions
Conditions
in free air
in free air
25
75
125
[1]
[1]
T
006aab621
amb
Min
-
-
-
( C)
175
Min
-
55
65
Typ
-
-
-
BC847DS
© NXP B.V. 2009. All rights reserved.
Max
150
+150
+150
Max
500
250
328
Unit
C
C
C
Unit
K/W
K/W
K/W
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