BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 6

• Manufacturer Part Number: BC847DS,115
• Description: TRANS NPN/NPN GP 45V 6TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC847DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063469115

NXP Semiconductors
BC847DS_1
Product data sheet
Fig 5.
Fig 7.
V
V
CEsat
(V)
(V)
(1) T
(2) T
(3) T
10
10
BE
0.8
0.6
0.4
10
1
1
10
1
2
10
V
Per transistor: Base-emitter voltage as a
function of collector current; typical values
I
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
C
CE
amb
amb
amb
1
1
/I
B
= 5 V; T
= 20
= 100 C
= 25 C
= 55 C
1
1
amb
(1)
(2)
(3)
= 25 C
10
10
10
10
2
2
I
I
006aaa536
006aaa535
C
C
(mA)
(mA)
10
10
Rev. 01 — 25 August 2009
3
3
Fig 6.
Fig 8.
45 V, 100 mA NPN/NPN general-purpose transistor
V
(MHz)
BEsat
(V)
f
(1) T
(2) T
(3) T
T
10
10
1.3
1.1
0.9
0.7
0.5
0.3
0.1
10
10
3
2
I
Per transistor: Base-emitter saturation voltage
as a function of collector current;
typical values
1
V
Per transistor: Transition frequency as a
function of collector current; typical values
C
amb
amb
amb
1
CE
/I
B
= 5 V; T
= 20
= 55 C
= 25 C
= 100 C
1
(1)
(2)
(3)
amb
= 25 C
10
10
I
C
BC847DS
10
(mA)
© NXP B.V. 2009. All rights reserved.
2
I
006aaa534
C
006aaa537
(mA)
10
10
3
2
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