BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 5

• Manufacturer Part Number: BC847DS,115
• Description: TRANS NPN/NPN GP 45V 6TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC847DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063469115

NXP Semiconductors
BC847DS_1
Product data sheet
Fig 3.
h
(1) T
(2) T
(3) T
FE
600
400
200
0
10
V
Per transistor: DC current gain as a function of
collector current; typical values
CE
amb
amb
amb
2
= 5 V
= 100 C
= 25 C
= 55 C
10
(1)
(2)
(3)
1
Table 7.
T
Symbol Parameter
C
C
f
NF
T
amb
1
c
e
= 25 C unless otherwise specified.
10
collector capacitance V
emitter capacitance
transition frequency
noise figure
Characteristics
10
006aaa533
2
I
C
(mA)
10
Rev. 01 — 25 August 2009
3
…continued
Conditions
f = 1 MHz
V
f = 1 MHz
V
f = 100 MHz
V
R
f = 10 Hz to 15.7 kHz
V
R
B = 200 Hz
CB
EB
CE
CE
CE
S
S
= 2 k ;
= 2 k ; f = 1 kHz;
= 0.5 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
Fig 4.
45 V, 100 mA NPN/NPN general-purpose transistor
(A)
I
0.20
C
0.16
0.12
0.08
0.04
C
C
C
E
0
C
= 10 mA;
= 0.2 mA;
= 0.2 mA;
T
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
0
= i
= i
I
amb
B
e
(mA) = 4.50
c
= 0 A;
= 0 A;
= 25 C
2
4.05
3.60
3.15
4
Min
-
-
100
-
-
6
Typ
1.9
11
-
1.9
3.1
1.35
0.90
0.45
2.70
2.25
1.80
BC847DS
© NXP B.V. 2009. All rights reserved.
8
006aaa532
V
Max
-
-
-
-
-
CE
(V)
10
Unit
pF
pF
MHz
dB
dB
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