BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 7

• Manufacturer Part Number: BC847DS,115
• Description: TRANS NPN/NPN GP 45V 6TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC847DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063469115

NXP Semiconductors
BC847DS_1
Product data sheet
Fig 9.
(pF)
C
c
6
4
2
0
0
f = 1 MHz; T
Per transistor: Collector capacitance as a
function of collector-base voltage;
typical values
2
amb
= 25 C
4
6
8
006aab620
V
CB
(V)
Rev. 01 — 25 August 2009
10
Fig 10. Per transistor: Emitter capacitance as a
45 V, 100 mA NPN/NPN general-purpose transistor
(pF)
C
e
15
13
11
9
7
5
0
f = 1 MHz; T
function of emitter-base voltage; typical values
amb
2
= 25 C
4
BC847DS
V
© NXP B.V. 2009. All rights reserved.
EB
006aaa539
(V)
6
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