MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 100

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Figure 52: Bank Read – with Auto Precharge
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
Bank address
Command 1
DQS, DQS#
DQS, DQS#
Case 2: t AC (MAX) and t DQSCK (MAX)
Case 1: t AC (MIN) and t DQSCK (MIN)
Address
DQ 6
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown.
3. The DDR2 SDRAM internally delays auto precharge until both
4. Enable auto precharge.
5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
6. DO n = data-out from column n; subsequent elements are applied in the programmed
t CK
these times.
have been satisfied.
but to when the device begins to drive or no longer drives, respectively.
order.
t RCD
t RAS
t RC
NOP 1
T2
t CH
t CL
READ 2,3
Bank x
Col n
4
T3
AL = 1
prefetch
4-bit
100
NOP 1
T4
t RTP
NOP 1
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t LZ (MIN)
t LZ (MAX)
CL = 3
512Mb: x4, x8, x16 DDR2 SDRAM
Internal
precharge
5
NOP 1
T6
5
t RPRE
t LZ (MIN)
t LZ (MAX)
t RPRE
NOP 1
Transitioning Data
T7
t DQSCK (MIN)
t RP
DO
t DQSCK (MAX)
t AC (MIN)
n
t AC (MAX)
DO
n
T7n
2004 Micron Technology, Inc. All rights reserved.
t
RAS (MIN) and
NOP 1
T8
t HZ (MIN)
t HZ (MAX)
T8n
t RPST
t RPST
Don’t Care
Bank x
ACT
RA
5
RA
t
RTP (MIN)
5
READ