MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 22
MT47H64M8CF-25E IT:G
Manufacturer Part Number
MT47H64M8CF-25E IT:G
Description
64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
Manufacturer
Micron Technology Inc
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Table 6: Temperature Limits
Figure 10: Example Temperature Test Point Location
Table 7: Thermal Impedance
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
Parameter
Storage temperature
Operating temperature: commercial
Operating temperature: industrial
Operating temperature: automotive
Die Revision
F
1
Package Substrate
60-ball
84-ball
Notes:
Test point
2-layer
4-layer
2-layer
4-layer
1. MAX storage case temperature T
2. MAX operating case temperature T
3. Device functionality is not guaranteed if the device exceeds maximum T
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
in Figure 10. This case temperature limit is allowed to be exceeded briefly during pack-
age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering Pa-
rameters.”
in Figure 10.
operation.
Lmm x Wmm FBGA
Airflow = 0m/s
Θ Θ JA (°C/W)
Width (W)
71.4
53.6
65.8
50.0
0.5 (W)
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
Symbol
0.5 (L)
22
Θ JA (°C/W)
T
T
T
T
T
T
Length (L)
STG
C
C
A
C
A
54.1
44.5
50.4
41.3
STG
C
is measured in the center of the package, as shown
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package, as shown
Min
512Mb: x4, x8, x16 DDR2 SDRAM
–55
–40
–40
–40
–40
0
Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W)
Θ JA (°C/W)
47.5
40.5
44.3
37.7
Max
150
105
105
85
95
85
2004 Micron Technology, Inc. All rights reserved.
Units
°C
°C
°C
°C
°C
°C
33.7
33.5
30.7
30.5
C
during
2, 3 , 4
Notes
2, 3, 4
2, 3
4, 5
4, 5
1
5.5
4.1
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