M25PX64-VME6G NUMONYX, M25PX64-VME6G Datasheet - Page 14

• Manufacturer Part Number: M25PX64-VME6G
• Description: NEW 64MB T9HX SECTOR ERASE
• Manufacturer: NUMONYX

Specifications of M25PX64-VME6G

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 24b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 8M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

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When Chip Select (S) is High, the device is deselected, but could remain in the active power
mode until all internal cycles have completed (program, erase, write status register). The
device then goes in to the standby power mode. The device consumption drops to I
The deep power-down mode is entered when the specific instruction (the deep power-down
(DP) instruction) is executed. The device consumption drops further to I
remains in this mode until another specific instruction (the release from deep power-down
(RDP) instruction) is executed.
While in the deep power-down mode, the device ignores all write, program and erase
instructions (see
software protection mechanism, when the device is not in active use, to protect the device
from inadvertent write, program or erase instructions.
Status register
The status register contains a number of status and control bits that can be read or set (as
appropriate) by specific instructions. See
detailed description of the status register bits.
Section 6.18: Deep power-down
Section 6.4: Read status register (RDSR)
(DP)), this can be used as an extra
CC2
. The device
CC1
for a
.