M25PX64-VME6G NUMONYX, M25PX64-VME6G Datasheet - Page 37

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M25PX64-VME6G

Manufacturer Part Number
M25PX64-VME6G
Description
NEW 64MB T9HX SECTOR ERASE
Manufacturer
NUMONYX
Datasheet

Specifications of M25PX64-VME6G

Cell Type
NOR
Density
64Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
24b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VDFPN
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
8M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PX64-VME6G
Manufacturer:
NEC
Quantity:
100
Part Number:
M25PX64-VME6G
Manufacturer:
ST
Quantity:
20 000
6.7
Read data bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, are shifted out on serial data output (DQ1) at a
maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.
When the highest address is reached, the address counter rolls over to 000000h, allowing
the read sequence to be continued indefinitely.
The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip
Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read
data bytes at higher speed (FAST_READ) instruction, while an erase, program or write
cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 15. Read data bytes at higher speed (FAST_READ) instruction sequence
1. Address bit A23 is don’t care.
DQ0
DQ1
S
C
DQ0
DQ1
S
C
and data-out sequence
7
0
32 33 34
1
6
High Impedance
Dummy byte
5
2
Instruction
C
, during the falling edge of Serial Clock (C).
3
4
35
3
4
36 37 38 39 40 41 42 43 44 45 46
5
2
1
6
7
0
MSB
23
7
8
Figure
22 21
9 10
6
24-bit address
DATA OUT 1
5
15.
4
3
28 29 30 31
3
2
2
(1)
1
1
0
0
47
MSB
7
6
DATA OUT 2
5
4
3
2
1
0
MSB
AI13737b
7
37/70

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