M25PX64-VME6G NUMONYX, M25PX64-VME6G Datasheet - Page 28

• Manufacturer Part Number: M25PX64-VME6G
• Description: NEW 64MB T9HX SECTOR ERASE
• Manufacturer: NUMONYX

Specifications of M25PX64-VME6G

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 24b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 8M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

6.1
28/70
Write enable (WREN)
The write enable (WREN) instruction
The write enable latch (WEL) bit must be set prior to every page program (PP), dual input
fast program (DIFP), program OTP (POTP), write to lock register (WRLR), subsector erase
(SSE), sector erase (SE), bulk erase (BE) and write status register (WRSR) instruction.
The write enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Figure 9.
Write enable (WREN) instruction sequence
S
C
DQ0
DQ1
High Impedance
0
(Figure
1
2
Instruction
3
9) sets the write enable latch (WEL) bit.
4
5
6
7
AI13731