M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet - Page 26

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M29W160EB7AN6E

Manufacturer Part Number
M29W160EB7AN6E
Description
Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W160EB7AN6E

Package
48TSOP
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
M29W160ET, M29W160EB
Figure 15. Reset/Block Temporary Unprotect AC Waveforms
Table 15. Reset/Block Temporary Unprotect AC Characteristics
Note: 1. Sampled only, not 100% tested.
26/42
t
t
t
t
PHPHH
Symbol
t
t
t
PHWL
RHWL
PHGL
RHGL
RHEL
PLYH
t
t
PHEL
PLPX
RB
RP
(1)
W,
(1)
(1)
(1)
(1)
(1)
(1)
E, G
t
READY
t
VIDR
t
Alt
t
t
RH
RB
RP
RP High to Write Enable Low, Chip Enable Low,
Output Enable Low
RB High to Write Enable Low, Chip Enable Low,
Output Enable Low
RP Pulse Width
RP Low to Read Mode
RP Rise Time to V
tPLPX
tPLYH
ID
tPHWL, tPHEL, tPHGL
Parameter
tRHWL, tRHEL, tRHGL
Max
Min
Min
Min
Min
70/7A/80
tPHPHH
500
500
50
10
0
M29W160E
500
500
10
90
50
AI02931B
0
Unit
ns
ns
ns
μs
ns

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