M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet - Page 29

• Manufacturer Part Number: M29W160EB7AN6E
• Description: Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W160EB7AN6E

• Package: 48TSOP
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 18. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package outline, bottom view
Table 18. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package mechanical data
Symbol
ddd
D1
FD
FE
SD
SE
A1
A2
E1
A
D
E
b
e
E
11.00
0.48
0.80
7.00
1.00
13.0
7.00
2.00
3.00
0.50
0.50
Typ
—
—
—
BALL "A1"
FD
E1
FE
A
millimeters
10.90
12.90
e
0.43
0.55
Min
—
—
—
—
—
—
—
—
—
—
D1
D
SD
b
11.10
13.10
Max
1.40
0.53
0.65
0.15
—
—
—
—
—
—
—
—
A1
SE
A2
0.0196
0.0196
0.018
0.031
0.433
0.275
0.039
0.511
0.275
0.078
0.118
Typ
—
—
—
M29W160ET, M29W160EB
BGA-Z23
inches
0.016
0.021
0.429
0.507
Min
—
—
—
—
—
—
—
—
—
—
ddd
0.0059
0.055
0.025
0.437
0.515
Max
—
—
—
—
—
—
—
—
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