M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet - Page 28
M29W160EB7AN6E
Manufacturer Part Number
M29W160EB7AN6E
Description
Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray
Manufacturer
NUMONYX
Datasheet
1.M29W160ET70N6E.pdf
(42 pages)
Specifications of M29W160EB7AN6E
Package
48TSOP
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
M29W160ET, M29W160EB
Figure 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Outline, bottom view
Table 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data
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Symbol
ddd
D1
FD
FE
SD
SE
A1
A2
E1
A
D
E
b
e
E
6.000
4.000
8.000
5.600
0.800
1.000
1.200
0.400
0.400
Typ
E1
FE
BALL "A1"
FD
A
millimeters
0.260
0.350
5.900
7.900
e
Min
–
–
–
–
–
–
–
SD
D1
D
1.200
0.900
0.450
6.100
0.100
8.100
Max
–
–
–
–
–
–
–
b
SE
e
A1
A2
0.2362
0.1575
0.3150
0.2205
0.0315
0.0394
0.0472
0.0157
0.0157
Typ
inches
0.0102
0.0138
0.2323
0.3110
BGA-Z32
Min
–
–
–
–
–
–
–
ddd
0.0472
0.0354
0.0177
0.2402
0.0039
0.3189
Max
–
–
–
–
–
–
–