PMBT3904,215 NXP Semiconductors, PMBT3904,215 Datasheet - Page 3

• Manufacturer Part Number: PMBT3904,215
• Description: TRANS NPN SW 200MA 40V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 300 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1741-2; 933776000215; PMBT3904 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 12
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
V
C
C
amb
C
CM
BM
CBO
EBO
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
BEsat
NPN switching transistor
th(j-a)
c
e
= 25 °C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
PARAMETER
PARAMETER
PARAMETER
I
I
V
I
I
I
I
I
I
f = 1 MHz
E
C
C
C
C
C
E
C
CE
I
I
I
I
I
= 0; V
= 0; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= I
= I
C
C
C
C
C
= 1 V; see Fig.2; note 1
= 0.1 mA
= 1 mA
= 10 mA
= 50 mA
= 100 mA
e
c
= 0; V
= 0; V
CB
open emitter
open base
open collector
T
EB
amb
3
CONDITIONS
= 30 V
= 6 V
CB
BE
B
B
B
B
note 1
≤ 25 °C; note 1
= 1 mA
= 5 mA
= 1 mA
= 5 mA
CONDITIONS
= 5 V; f = 1 MHz
= 500 mV;
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
−
−
60
80
100
60
30
−
−
650
−
−
−
MIN.
MIN.
VALUE
500
60
40
6
200
200
100
250
+150
150
+150
50
50
−
−
300
−
−
200
300
850
950
4
8
MAX.
MAX.
PMBT3904
Product data sheet
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
nA
nA
mV
mV
mV
mV
pF
pF
UNIT
UNIT