PMBT3904,215 NXP Semiconductors, PMBT3904,215 Datasheet - Page 4

• Manufacturer Part Number: PMBT3904,215
• Description: TRANS NPN SW 200MA 40V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 300 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1741-2; 933776000215; PMBT3904 T/R

NXP Semiconductors
Note
1. Pulse test: t
2004 Jan 12
handbook, halfpage
f
F
Switching times (between 10% and 90% levels); see Fig.3
t
t
t
t
T
d
r
s
f
SYMBOL
NPN switching transistor
V
(1) T
(2) T
(3) T
h FE
CE
500
400
300
200
100
= 1 V.
amb
amb
amb
0
10
Fig.2 DC current gain; typical values.
−1
= 150 °C.
= 25 °C.
= −55 °C.
transition frequency
noise figure
delay time
rise time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
1
(1)
(2)
(3)
PARAMETER
10
10
2
I C (mA)
MGU821
10
I
f = 100 MHz
I
f = 10 Hz to 15.7 kHz
I
I
C
C
Con
Boff
3
= 10 mA; V
= 100 µA; V
= −1 mA
= 10 mA; I
4
CONDITIONS
handbook, halfpage
CE
CE
Bon
T
(1) I
(2) I
(3) I
(4) I
Fig.3
= 20 V;
(mA)
amb
= 5 V; R
I C
= 1 mA;
250
200
150
100
50
B
B
B
B
= 25 °C.
0
= 5.5 mA.
= 5 mA.
= 4.5 mA.
= 3.5 mA.
0
Collector current as a function of
collector-emitter voltage.
S
= 1 kΩ;
(1)
2
(2)
(3)
(5) I
(6) I
(7) I
(8) I
(4)
300
−
−
−
−
−
4
B
B
B
B
= 3 mA.
= 2.5 mA.
= 2 mA.
= 1.5 mA.
MIN.
(5) (6)
6
(7)
−
5
35
35
200
50
MAX.
PMBT3904
Product data sheet
(9) I
(10) I
8
(10)
V CE (V)
(8)
(9)
MGU822
B
B
= 1 mA.
= 0.5 mA.
MHz
dB
ns
ns
ns
ns
10
UNIT