PMBT3904,215 NXP Semiconductors, PMBT3904,215 Datasheet - Page 6

• Manufacturer Part Number: PMBT3904,215
• Description: TRANS NPN SW 200MA 40V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 300 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1741-2; 933776000215; PMBT3904 T/R

NXP Semiconductors
2004 Jan 12
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 2.5 kΩ; R
V
Oscilloscope: input impedance Z
i
BB
= 5 V; T = 500 µs; t
= −1.9 V; V
CC
= 3 V.
p
= 10 µs; t
B
= 3.9 kΩ; R
i
r
= 50 Ω.
= t
f
≤ 3 ns.
oscilloscope
C
= 270 Ω.
V i
Fig.7 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
6
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
PMBT3904
Product data sheet