PMBT3904,215 NXP Semiconductors, PMBT3904,215 Datasheet - Page 5

• Manufacturer Part Number: PMBT3904,215
• Description: TRANS NPN SW 200MA 40V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Gain Bandwidth Product Ft: 300 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1741-2; 933776000215; PMBT3904 T/R

NXP Semiconductors
2004 Jan 12
handbook, halfpage
handbook, halfpage
NPN switching transistor
V CEsat
V
(1) T
(2) T
(3) T
Fig.4
I
(1) T
(2) T
(3) T
Fig.6
(mV)
V BE
C
(mV)
CE
/I
1200
1000
B
800
600
400
200
10
10
= 1 V.
= 10.
10
amb
amb
amb
amb
amb
amb
10
10
3
2
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current.
Collector-emitter saturation voltage as a
function of collector current.
1
1
(1)
(2)
(3)
10
10
(2)
(1)
(3)
10
10
2
2
I C (mA)
I C (mA)
MGU825
MGU823
10
10
3
3
5
handbook, halfpage
V BEsat
(mV)
I
(1) T
(2) T
(3) T
Fig.5
C
/I
1200
1000
B
800
600
400
200
= 10.
amb
amb
amb
10
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter saturation voltage as a
function of collector current.
1
10
(1)
(2)
(3)
10
PMBT3904
Product data sheet
2
I C (mA)
MGU824
10
3