BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet

RF Amplifier RF SILICON MMIC

BGA 777L7 E6327

Manufacturer Part Number
BGA 777L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Low Power Single Bandr
Datasheet

Specifications of BGA 777L7 E6327

Operating Frequency
2650 MHz
P1db
4 dBm
Noise Figure
1.2 dB
Operating Supply Voltage
2.8 V
Supply Current
10 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSLP-7-1
Minimum Operating Temperature
- 30 C
Other names
BGA777L7E6327XT
D a t a S h e e t , V 3 . 0 , J u l y 2 0 0 9
B G A 7 7 7 L 7
S i ng l e - B an d U M T S L N A
( 2 3 0 0 - 2 7 0 0 M H z )
R F & P r o t e c t i o n D e v i c e s

Related parts for BGA 777L7 E6327

BGA 777L7 E6327 Summary of contents

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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BGA777L7 Revision History: 2009-07-02, V3.0 Previous Version: 2009-02-18, V1.0 preliminary Page Subjects (major changes since last revision) 7 Updated DC characteristics (added limits) 8 Added supply current and power gain characteristics 9 Updated RF characteristics for application board BGA7xxL7 and ...

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Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Description The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green ...

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Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol V Supply voltage CC I Supply current CC V Pin voltage PIN V Pin voltage RF Input Pin RFIN P RF input power RFIN T Junction ...

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DC Characteristics Table 4 DC Characteristics, Parameter Symbol V Supply voltage CC I Supply current high gain CCHG mode I Supply current low gain CCLG mode I Supply current standby CCOFF mode V Logic level high HI V Logic ...

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Supply Current and Power Gain Characteristics; Supply current and power gain high gain mode versus reference resistor R reference resistor; low gain mode supply current is independent of reference resistor Supply Current = ...

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Measured RF Characteristics UMTS Band 7 Table 7 Typical Characteristics 2650 MHz Band T Parameter Pass band range band I Current consumption Gain 2) Reverse Isolation Noise figure 2) Input return loss 2) Output return loss 3) Stability factor ...

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Measured RF Characteristics UMTS Band 38 Table 8 Typical Characteristics 2600 MHz Band T Parameter Pass band range band I Current consumption Gain 2) Reverse Isolation Noise figure 2) Input return loss 2) Output return loss 3) Stability factor ...

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Measured RF Characteristics UMTS Band 40 Table 9 Typical Characteristics 2300 MHz Band T Parameter Pass band range band I Current consumption Gain 2) Reverse Isolation Noise figure 2) Input return loss 2) Output return loss 3) Stability factor ...

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Measured Performance Band 7 Application High Gain Mode vs. Frequency ° Power Gain | = ...

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Measured Performance Band 7 Application High Gain Mode vs. Temperature NF f Noise Figure = 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] 2.13 Measured Performance ...

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NF T Noise Figure = 1.8 1.6 1.4 1.2 1 0.8 0.6 −40 − [°C] A 2.14 Measured Performance Band 7 Application Low Gain Mode vs. Frequency ...

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Matching | | = −5 −10 −15 −20 −25 −30 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz Noise Figure = f ...

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Measured Performance Band 7 Application Low Gain Mode vs. Temperature 2.15 Measured Performance Band 7 Application Low Gain Mode vs. Temperature 2 2 Power Gain ...

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Application Circuit and Block Diagram 3.1 UMTS Band 7 Application Circuit Schematic L1 C1 3.3nH 2.4pF RFIN 1 2600 MHz RFIN L2 3.9nH 2 VEN 2 ...

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UMTS Band 38 Application Circuit Schematic L1 C1 3.3nH 2.4pF RFIN 1 2500 MHz RFIN L2 4.1nH 2 VEN 2 VGS Figure 3 Application circuit ...

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UMTS Band 40 Application Circuit Schematic 10pF RFIN 1 2300 MHz RFIN L1 2.7nH 2 VEN 2 VGS Figure 4 Application ...

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Application Board Figure 5 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 µm Cu metallization, gold plated. Board size Figure 6 Cross-section view of application board ...

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Figure 7 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. ...

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Physical Characteristics 4.1 Package Dimensions 1.4 0.3 0.3 0.3 Copper Solder mask Figure 8 Recommended footprint and stencil layout for the TSLP-7-1 package Top view Pin 1 marking 1) Dimension applies to plated terminal Figure 9 ...

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Figure 11 Marking layout Data Sheet BGA777L7 - Low Power Single-Band UMTS LNA 23 Physical Characteristics Package Dimensions V3.0, 2009-07-02 ...

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... Published by Infineon Technologies AG ...

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