BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet - Page 5

• Manufacturer Part Number: BGA 777L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Low Power Single Bandr

Specifications of BGA 777L7 E6327

• Operating Frequency: 2650 MHz
• P1db: 4 dBm
• Noise Figure: 1.2 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 10 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSLP-7-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA777L7E6327XT

1
The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is
based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1
leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging
of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD
protection on-chip as well as matching off chip.
Features
•
•
•
•
•
•
•
•
•
Figure 1
Type
BGA777L7
Data Sheet
Gain: 16 / -7 dB in high / low gain mode
Noise figure: 1.2 dB in high gain mode
Supply current: 4.2 / 0.5 mA in high / low gain mode
Standby mode (< 2 µA typ.)
Inputs pre-matched to 50 Ω
2 kV HBM ESD protection
Low external component count
Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm)
Pb-free (RoHS compliant) package
Description
Block diagram of single-band LNA
Package
TSLP-7-1
BGA777L7 - Low Power Single-Band UMTS LNA
B7
Marking
5
TSLP-7-1 package
Chip
T1531
V3.0, 2009-07-02
Description