BCX52-10,115 NXP Semiconductors, BCX52-10,115 Datasheet - Page 12

• Manufacturer Part Number: BCX52-10,115
• Description: TRANSISTOR PNP 60V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX52-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663050115::BCX52-10 T/R::BCX52-10 T/R

NXP Semiconductors
7. Characteristics
BCP52_BCX52_BC52PA
Product data sheet
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Z
(K/W)
th(j-a)
10
10
10
10
–1
1
3
2
10
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
typical values
–5
0.25
0.1
duty cycle = 1
0.5
0
0.75
0.33
0.05
0.02
0.01
0.2
10
–4
Table 8.
T
[1]
Symbol
I
f
I
h
V
V
C
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25
10

C unless otherwise specified.
–3
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
h
h
p
FE
FE
 300 s;  = 0.02.
All information provided in this document is subject to legal disclaimers.
selection -10
selection -16
10
–2
Rev. 9 — 18 October 2011
10
Conditions
V
V
T
V
V
V
I
I
V
V
f = 1 MHz
V
f = 100 MHz
C
B
2
j
–1
CB
CB
EB
CE
CE
CE
CB
CE
= 150 C
I
I
I
I
I
= 500 mA;
= 50 mA
C
C
C
C
C
= 30 V; I
= 30 V; I
= 5 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BCP52; BCX52; BC52PA
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
60 V, 1 A PNP medium power transistors
= i
= 0 A
= 0 A;
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
-
10
Typ
-
-
-
-
-
-
-
-
-
-
15
145
2
© NXP B.V. 2011. All rights reserved.
t
p
006aac687
(s)
250
160
250
-
Max
100
10
100
-
-
0.5
1
-
10
3
Unit
nA
A
nA
V
V
pF
MHz
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