BCX52-10,115 NXP Semiconductors, BCX52-10,115 Datasheet - Page 14

• Manufacturer Part Number: BCX52-10,115
• Description: TRANSISTOR PNP 60V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX52-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663050115::BCX52-10 T/R::BCX52-10 T/R

NXP Semiconductors
8. Test information
9. Package outline
BCP52_BCX52_BC52PA
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 19. Package outline SOT223 (SC-73)
Fig 20. Package outline SOT89 (SC-62/TO-243)
All information provided in this document is subject to legal disclaimers.
Dimensions in mm
Dimensions in mm
Rev. 9 — 18 October 2011
2.6
2.4
7.3
6.7
3.7
3.3
0.53
0.40
1
1.5
1
4.6
4.4
1.8
1.4
2.3
3
BCP52; BCX52; BC52PA
2
6.7
6.3
3.1
2.9
4.6
2
3
60 V, 1 A PNP medium power transistors
4
0.48
0.35
3
0.8
0.6
1.2
0.8
1.1
0.7
1.6
1.4
1.8
1.5
0.32
0.22
0.44
0.23
4.25
3.75
04-11-10
06-08-29
© NXP B.V. 2011. All rights reserved.
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