BCX52-10,115 NXP Semiconductors, BCX52-10,115 Datasheet - Page 9

TRANSISTOR PNP 60V 1A SOT89

BCX52-10,115

Manufacturer Part Number
BCX52-10,115
Description
TRANSISTOR PNP 60V 1A SOT89
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BCX52-10,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mounting Type
Surface Mount
Power - Max
1.3W
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Transistor Type
PNP
Frequency - Transition
145MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1300 mW
Maximum Operating Frequency
145 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933663050115::BCX52-10 T/R::BCX52-10 T/R
NXP Semiconductors
BCP52_BCX52_BC52PA
Product data sheet
Fig 8.
Fig 9.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
–1
–1
1
1
3
2
3
2
10
10
FR4 PCB, mounting pad for collector 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
–5
–5
duty cycle = 1
duty cycle = 1
0.5
0.2
0.05
0.01
0
0.5
0.2
0.05
0
0.75
0.33
0.02
0.75
0.33
0.02
0.01
0.1
0.1
10
10
–4
–4
10
10
–3
–3
All information provided in this document is subject to legal disclaimers.
10
10
2
2
–2
–2
Rev. 9 — 18 October 2011
10
10
–1
–1
BCP52; BCX52; BC52PA
1
1
60 V, 1 A PNP medium power transistors
10
10
10
10
2
2
© NXP B.V. 2011. All rights reserved.
t
t
p
p
006aac681
006aac682
(s)
(s)
10
10
3
3
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