BCX52-10,115 NXP Semiconductors, BCX52-10,115 Datasheet - Page 13

• Manufacturer Part Number: BCX52-10,115
• Description: TRANSISTOR PNP 60V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX52-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663050115::BCX52-10 T/R::BCX52-10 T/R

NXP Semiconductors
BCP52_BCX52_BC52PA
Product data sheet
Fig 15. DC current gain as a function of collector
Fig 17. Base-emitter voltage as a function of collector
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
–1.2
BE
–0.8
–0.4
300
200
100
0.0
–10
–10
0
V
current; typical values
V
current; typical values
–4
–1
amb
amb
amb
amb
amb
amb
CE
CE
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
–10
–1
–3
(1)
(2)
(3)
(1)
(2)
(3)
–10
–10
–2
–10
–10
–1
2
–10
–1
All information provided in this document is subject to legal disclaimers.
006aac688
006aac689
3
I
C
I
C
(mA)
(A)
–10
–10
Rev. 9 — 18 October 2011
4
Fig 16. Collector current as a function of
Fig 18. Collector-emitter saturation voltage as a
BCP52; BCX52; BC52PA
V
–10
–10
CEsat
(A)
(V)
I
(1) T
(2) T
(3) T
−1.6
C
−1.2
−0.8
−0.4
–10
–1
–1
–2
–10
0
0
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
–1
amb
amb
amb
amb
/I
B
60 V, 1 A PNP medium power transistors
= 10
= 25 C
= 100 C
= 25 C
= 55 C
−0.4
–1
I
B
−0.8
(mA) = −45 −40.5 −36
–10
(1)
(2)
(3)
−1.2
–10
2
−1.6
–10
© NXP B.V. 2011. All rights reserved.
006aaa230
V
006aac690
3
I
C
CE
−31.5
−22.5
−18
−13.5
−27
−9
−4.5
(mA)
(V)
−2.0
–10
4
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