MT46V128M8P-6T:A Micron Technology Inc, MT46V128M8P-6T:A Datasheet - Page 48

DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray

MT46V128M8P-6T:A

Manufacturer Part Number
MT46V128M8P-6T:A
Description
DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V128M8P-6T:A

Density
1 Gb
Maximum Clock Rate
333 MHz
Package
66TSOP
Address Bus Width
16 Bit
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (128M x 8)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Package / Case
66-TSOP
Organization
128Mx8
Address Bus
16b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
230mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
CAS Latency (CL)
Figure 22:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
CAS Latency
Note:
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the first bit of output data. The latency can be set to 2, 2.5, or 3 (-5B
only) clocks, as shown in Figure 22. Reserved states should not be used, as unknown
operation or incompatibility with future versions may result.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available nominally coincident with clock edge n + m. Table 29 on page 49 indi-
cates the operating frequencies at which each CL setting can be used.
Command
Command
Command
BL = 4 in the cases shown; shown with nominal
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
READ
READ
READ
T0
T0
T0
CL = 2
CL = 2.5
CL = 3
NOP
NOP
NOP
T1
T1
T1
48
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
NOP
NOP
T2
T2
T2
t
T2n
T2n
AC,
1Gb: x4, x8, x16 DDR SDRAM
t
DQSCK, and
NOP
NOP
NOP
T3
T3
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
T3n
T3n
T3n
t
DQSQ.
Operations

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