MT46V128M8P-6T:A Micron Technology Inc, MT46V128M8P-6T:A Datasheet - Page 54

• Manufacturer Part Number: MT46V128M8P-6T:A
• Description: DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M8P-6T:A

• Density: 1 Gb
• Maximum Clock Rate: 333 MHz
• Package: 66TSOP
• Address Bus Width: 16 Bit
• Operating Supply Voltage: 2.5 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Package / Case: 66-TSOP
• Organization: 128Mx8
• Address Bus: 16b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 230mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 26:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Consecutive READ Bursts
Notes:
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
the first).
ing DO b.
Bank,
READ
Col n
Bank,
READ
Bank,
READ
Col n
Col n
T0
T0
T0
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
t
AC,
CL = 3
t
DQSCK, and
54
Bank,
Bank,
Bank,
READ
Col b
Col b
Col b
READ
READ
T2
T2
T2
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
T2n
T2n
DO
n
T3
NOP
NOP
NOP
T3
T3
DO
1Gb: x4, x8, x16 DDR SDRAM
n
T3n
T3n
T3n
Transitioning Data
T4
NOP
T4
T4
NOP
NOP
©2003 Micron Technology, Inc. All rights reserved.
DO
b
T4n
T4n
T4n
DO
b
Operations
T5
T5
T5
NOP
NOP
NOP
DO
Don’t Care
b
T5n
T5n
T5n