BC618 ON Semiconductor, BC618 Datasheet - Page 172

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
2. V
3. 10 x 1000 ms exponential decay surge waveform.
TVS − IN SURFACE MOUNT
1PMT Series Unidirectional Overvoltage Transient Suppressors, 200 W Peak Power @ 1 ms Surge
(10 x 1000 ms)
ELECTRICAL CHARACTERISTICS
1PMT5.0A
1PMT7.0A
1PMT12A
1PMT16A
1PMT22A
1PMT26A
1PMT33A
greater than the DC or continuous peak operating voltage level.
BR
measured at pulse test current I
Device
Marking
MKM
MME
MMM
MKE
MLE
MLP
MLX
POWERMITE)
T
at ambient temperature of 25°C.
CASE 457
V
PLASTIC
(T
(Note 1)
RWM
L
5.0
7.0
12
16
22
26
33
= 30°C unless otherwise noted) (V
(V)
7.78
13.3
17.8
24.4
28.9
36.7
Min
6.4
V
http://onsemi.com
BR
@ I
18.75
T
Nom
25.6
30.4
38.7
6.7
8.2
14
(V) (Note 2)
171
Max
14.7
19.7
26.9
31.9
40.6
7.0
8.6
ON Semiconductor Selector Guide − Diodes
F
= 1.25 V @ 200 mA)
I RSM
I RSM
2
(mA)
1.0
1.0
1.0
1.0
1.0
10
10
I
T
Surge Current Characterisitcs
0
1 2
Time
I
R
@ V
(mA)
800
500
5.0
5.0
5.0
5.0
5.0
3
RWM
RWM
4
(ms)
) which should be equal to or
5
6
V
C
19.9
35.5
42.1
53.3
(V)
9.2
@ I
12
26
PP
(Note 3)
I
PP
14.6
8.8
7.0
4.9
4.2
3.3
19
(A)