BC618 ON Semiconductor, BC618 Datasheet - Page 72

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

See the BRT diagram for orientation of resistors.
BIPOLAR TRANSISTORS
COMBINATIONAL DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS)
EMC3DXV5
EMC4DXV5
EMC5DXV5
EMG2DXV5
NSB1010XV5
EMD4DXV6
NSB1011XV6
Devices listed in bold italic are ON Semiconductor preferred devices.
NSTB1002DXV5
NSTB1005DXV5
EMD5DXV6
NSBC114EPDXV6
NSBC114YPDXV6
NSBC123JPDXV6
NSBC124EPDXV6
NSBC143TPDXV6
NSBC143ZPDXV6
NSBC144EPDXV6
These devices include bias resistors on the semiconductor chip with the transistor.
Device
Device
Dual Common Base Collector
Dual Common Base Collector
Dual Complementary
Dual Common Base,
Common Emitter
Dual NPN
Type
Type
http://onsemi.com
V
V
(BR)CEO
(BR)CEO
ON Semiconductor Selector Guide − Bipolar Transistors
50
50
50
50
40
50
50
50
50
50
50
50
50
50
50
50
50
71
Max
Max
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
mA
mA
I
I
C
C
Min
Min
100
160
h
h
35
80
35
80
80
80
20
35
80
80
60
80
80
−
−
FE
FE
4.7k/4.7k
4.7k/10k
4.7k/47k
47k/47/k
4.7k/10k
2.2k/47k
4.7k/47k
2.2k/47k
10k/10k
10k/47k
47k/47k
10k/47k
10k/10k
10k/47k
22k/22k
47k/47k
4.7k/∞
Q1
Q1
(IN)
B
4.7K/47k
4.7k/47k
4.7k/47k
2.2k/47k
4.7k/47k
10k/10k
47k/47k
47k/47k
10k/10k
47k/47k
47k/47k
10k/10k
10k/47k
22k/22k
47k/47k
10k/10k
4.7k/∞
Q2
Q2
R1
R2
Case 463B−01
Case 463A−01
Package
Package
SOT−553
SOT−563
(OUT)
(GND)
C
E