BC618 ON Semiconductor, BC618 Datasheet - Page 187

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

13. V
14. Surge waveform 8 x 20 msec.
TVS/ESD PROTECTION − One Line
ESD9C Series
Single Line TVS/ESD in SOD−923; Meets IEC61000−4−2, Level 4
ELECTRICAL CHARACTERISTICS
Unidirectional
NUP1105L − LIN Bus Protector
Single Line TVS/ESD in SOT−23; 350 W Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4
ELECTRICAL CHARACTERISTICS
Bidirectional
ON Semiconductor Selector Guide − Diodes
ESD9C3.3
ESD9C5.0
NUP1105L
BR
Device
measured at pulse test current I
25.7
Min
Breakdown Voltage
1
V
BR
Nom
2
−
(V)
Device
3
T
at an ambient temperature of 25°C.
Max
28.4
(T
(T
A
A
= 25°C unless otherwise noted)
= 25°C unless otherwise noted)
(mA)
@ I
1.0
T
(continued)
Leakage Current
http://onsemi.com
(mA)
CASE 514AB
Max Reverse
0.1
I
R
SOD−923
CASE 318
STYLE 27
SOT−23
186
V
RWM
(V)
24
V
(Note
BR
@ I
Breakdown
11.0
Min
Typ
11)
5.0
Capacitance
(pF) @ 0 V,
−
Voltage
(V)
T
1.0 MHz
1
(mA)
@ I
1.0
1.0
1
2
Max
30
T
V
Reverse
Working
Voltage
RWM
Reverse
Current
Peak
Surge
3.3
5.0
Max
(A)
I
8.0
PP
(V)
2
(Clamping
Voltage @
Leakage
Reverse
Reverse
Voltage)
Current
3
I
R
Max
Max
1.0
0.5
I
(V)
V
44
(mA)
PP
C
Capacitance
Peak Power
(8x20 msec)
@ 0 Volts
Pin 1 to 2
(Note 14)
Typical
Rating
(pF)
12.8
350
6.0