BC618 ON Semiconductor, BC618 Datasheet - Page 177

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
2. V
3. 10 x 1000 ms exponential decay surge waveform.
4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
ON Semiconductor Selector Guide − Diodes
TVS − IN SURFACE MOUNT
1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 W Peak Power @ 1 ms Surge
(10 x 1000 ms) (continued)
ELECTRICAL CHARACTERISTICS
1SMB110A
1SMB120A
1SMB130A
1SMB150A
1SMB160A
1SMB170A
greater than the DC or continuous peak operating voltage level.
BR
Device
measured at pulse test current I
Peak Reverse
(V) (Note 1)
Working
Voltage
V
110
120
130
150
160
170
RWM
T
at ambient temperature of 25°C.
(T
(V) (Min)
Breakdown Voltage
(Note 2)
A
122
133
144
167
178
189
(continued)
= 25°C unless otherwise noted) (V
CASE 403A
PLASTIC
V
SMB
BR
@ I
T
http://onsemi.com
mA
1.0
1.0
1.0
1.0
1.0
1.0
176
Clamping
Maximum
V
Voltage
C
177
193
209
243
259
275
(V)
@ I
I RSM
I RSM
pp
2
F
= 3.5 V Max @ I
Surge Current Characterisitcs
0
1 2
Pulse Current
Time
(Note 3)
Peak
(A)
I
3.4
3.1
2.9
2.5
2.3
2.2
pp
3
F
4
(ms)
= 30 A) (Note 4)
5
RWM
6
Reverse Leakage
) which should be equal to or
Maximum
@ V
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
I
R
R
Marking
Device
PG
PM
PE
PK
PP
PR