BCR 114L3 E6327 Infineon Technologies, BCR 114L3 E6327 Datasheet - Page 11

• Manufacturer Part Number: BCR 114L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 114L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 160MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR114L3E6327XT; SP000014851

Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 15.000 Pieces/Reel
1
2
3
Orientation
marking
1) Dimension applies to plated terminals
Top view
0.225
0.15
Orientation
marking
Copper
0.05 MAX.
0.6
S
0.225
Solder mask
0.4
±0.05
4
2x
0.03
0.76
S
0.1
M
R0.19
2x
A B
0.2
0.5
Type code
Laser marking
0.17
Stencil apertures
0.5
0.2
0.15
0.05
±0.035
0.5
0.35
±0.035
Bottom view
1)
3
2
R0.1
0.6
1)
1
A
Package TSLP-3-4
0.1
M
A
B
B
0.1
0.1
0.05 2x
M
M
A
A B
B
2x