BCR 114L3 E6327 Infineon Technologies, BCR 114L3 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 114L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 114L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 160MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR114L3E6327XT; SP000014851

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
A
-1
-2
-3
-4
3
2
1
0
10
10
-4
-1
10
10
FE
i (on)
-3
0
=
= ( I
( I
C
)
C
10
10
)
-2
1
A
V
I
V
C
i(on)
10
10
-1
2
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
A
A
-1
-2
-3
-2
-3
-4
-5
-6
0
0
= ( I
C
), h
0.1
0.5
FE
= 20
i(off)
0.2
=
1
0.3
( I
C
)
Aug-29-2003
BCR114...
V
V
V
V
CEsat
i(off)
0.5
2