BCR 114L3 E6327 Infineon Technologies, BCR 114L3 E6327 Datasheet - Page 5

• Manufacturer Part Number: BCR 114L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 114L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 160MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR114L3E6327XT; SP000014851

Total power dissipation P
BCR114
Total power dissipation P
BCR114L3
mW
mW
300
200
150
100
300
200
150
100
50
50
0
0
0
0
20
20
40
40
60
60
80
80
tot
tot
100
100
= ( T
= ( T
120 °C
120 °C
S
S
)
)
T
T
S
S
150
150
5
Total power dissipation P
BCR114F
Total power dissipation P
BCR114T
mW
mW
300
200
150
100
300
200
150
100
50
50
0
0
0
0
20
20
40
40
60
60
80
80
tot
tot
100
100
= ( T
= ( T
Aug-29-2003
BCR114...
120 °C
120 °C
S
S
)
)
T
T
S
S
150
150