BCR 114L3 E6327 Infineon Technologies, BCR 114L3 E6327 Datasheet - Page 9

• Manufacturer Part Number: BCR 114L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 114L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 160MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR114L3E6327XT; SP000014851

Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Pin 1
0.4
A
+0.1
-0.05
0.25
Manufacturer
Date code (Year/Month)
Type code
M
B C
2.9
1
1.9
4
±0.1
0.8
3
3.15
2
0.95
0.9
1.2
0.8
C
B
acc. to
DIN 6784
+0.2
Example
0.2
0.20
1.15
1.1 MAX.
M
0.1 MAX.
A
Package SOT23
2003, July
BCW66