MT47H32M16GC-5E:B Micron Technology Inc, MT47H32M16GC-5E:B Datasheet - Page 116
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H32M16GC-5E:B
Manufacturer Part Number
MT47H32M16GC-5E:B
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16GC-5EB.pdf
(139 pages)
Specifications of MT47H32M16GC-5E:B
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
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Figure 66: Bank Write – Without Auto Precharge
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Bank select
DQS, DQS#
Command
Address
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 and AL = 0 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T9.
5. Subsequent rising DQS signals must align to the clock within
6. DI n = data-in for column n; subsequent elements are applied in the programmed order.
7.
8.
t CK
these times.
t
t
DSH is applicable during
DSS is applicable during
t RCD
NOP 1
T2
t CH
t CL
WRITE 2
Bank x
Col n
3
T3
WL ± t DQSS (NOM)
WL = 2
NOP 1
t
116
T4
t
DQSS (MAX) and is referenced from CK T6 or T7.
DQSS (MIN) and is referenced from CK T5 or T6.
t WPRE
NOP 1
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
n
512Mb: x4, x8, x16 DDR2 SDRAM
T5n
t DQSL t DQSH t WPST
t RAS
NOP 1
5
T6
T6n
Transitioning Data
NOP 1
T7
© 2004 Micron Technology, Inc. All rights reserved.
t
DQSS.
t WR
NOP 1
T8
One bank
All banks
Don’t Care
Bank x 4
T9
PRE
WRITE
t RP
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