MT47H32M16GC-5E:B Micron Technology Inc, MT47H32M16GC-5E:B Datasheet - Page 68
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H32M16GC-5E:B
Manufacturer Part Number
MT47H32M16GC-5E:B
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16GC-5EB.pdf
(139 pages)
Specifications of MT47H32M16GC-5E:B
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
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Table 32: Single-Ended DQS Slew Rate Derating Values Using
Reference points indicated in bold; Derating values are to be used with base
Table 33: Single-Ended DQS Slew Rate Fully Derated (DQS, DQ at Vref) at DDR2-667
Reference points indicated in bold
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
DQ (V/ns)
DQ (V/ns)
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
t
130
–28 –135 –28 –135 –28 –135 –28 –135 –28 –135 –13 –140
–78 –198 –78 –198 –78 –198 –78 –198 –78 –198 –63 –203 –53 –206 –43 –210 –33 –213
97
30
25
17
DS
–7
t
330
330
330
347
367
391
426
472
522
2.0 V/ns
5
2.0 V/ns
DS
t
–10
–24
–41
–64
–93
DH
53
32
t
291
290
290
290
290
290
290
290
289
DH
t
130
t
DS
97
30
25
17
–7
330
330
330
347
367
391
426
472
522
1.8 V/ns
5
1.8 V/ns
DS
t
–10
–24
–41
–64
–93
t
291
290
290
290
290
290
290
290
289
DH
53
32
DH
ble 33 (page 68) provides the Vref-based fully derated values for the DQ (
t
single-ended DQS; however, Table 32 (page 68) would be used with the base values.
DH
a
t
130
t
330
330
330
347
367
391
426
472
522
97
30
25
17
) for DDR2-667. It is not advised to operate DDR2-800 and DDR2-1066 devices with
DS
–7
1.6 V/ns
1.6 V/ns
DS
5
DQS Single-Ended Slew Rate Derated (at Vref)
DQS Single-Ended Slew Rate Derated (at Vref)
t
–10
–24
–41
–64
–93
t
291
290
290
290
290
290
290
290
289
DH
53
32
DH
t
130
t
330
330
330
347
367
391
426
472
522
97
30
25
17
DS
–7
1.4 V/ns
1.4 V/ns
DS
5
t
t
–10
–24
–41
–64
–93
291
290
290
290
290
290
290
290
289
DH
53
32
DH
68
t
130
t
330
330
330
347
367
391
426
472
522
DS
97
30
25
17
–7
1.2 V/ns
DS
1.2 V/ns
5
t
t
290
291
290
290
290
290
290
290
289
–10
–24
–41
–64
–93
DH
DH
53
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
t
145
112
345
t
345
345
362
382
406
441
487
537
45
t
DS
40
32
20
1.0 V/ns
DS
1.0 V/ns
8
DS
t
DS
b
b
t
–15
- and
–29
–46
–69
–98
t
285
DH
and
48
27
286
285
285
285
285
285
285
284
DH
Input Slew Rate Derating
t
t
t
155
122
DH
DH
50
42
30
18
DS
55
–3
t
355
355
372
392
416
451
497
547
0.8 V/ns
355
0.8 V/ns
DS
b-
b
-specified values
–102
–143
t
–18
–32
–49
–72
DH
t
45
24
282
282
282
282
282
281
282
282
281
DH
© 2004 Micron Technology, Inc. All rights reserved.
t
165
132
t
DS
65
60
52
40
28
365
365
365
382
402
426
461
507
557
0.6 V/ns
7
0.6 V/ns
DS
–105
–147
t
–22
–36
–53
–75
t
279
278
278
278
278
278
278
278
DH
41
20
DH
29
t
DS
a
t
175
142
t
375
375
375
392
412
436
471
517
567
DS
75
70
61
50
38
17
and
0.4 V/ns
0.4 V/ns
DS
–108
–150
t
–25
–39
–56
–79
t
276
275
275
275
275
275
275
275
274
DH
38
17
DH
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