MT47H32M16GC-5E:B Micron Technology Inc, MT47H32M16GC-5E:B Datasheet - Page 27
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MT47H32M16GC-5E:B
Manufacturer Part Number
MT47H32M16GC-5E:B
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16GC-5EB.pdf
(139 pages)
Specifications of MT47H32M16GC-5E:B
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
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Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Parameter
Vdd supply voltage relative to Vss
VddQ supply voltage relative to VssQ
VddL supply voltage relative to VssL
Voltage on any ball relative to Vss
Input leakage current; any input 0V ≤ Vin ≤ Vdd;
all other balls not under test = 0V
Output leakage current; 0V ≤ Vout ≤ VddQ; DQ
and ODT disabled
Vref leakage current; Vref = valid Vref level
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions oustide those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 28), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 29) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed in Table 7 (page 29). For designs that are expected to last several years and re-
quire the flexibility to use several DRAM die shrinks, consider using final target theta
values (rather than existing values) to account for increased thermal impedances from
the die size reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1. Vdd, VddQ, and VddL must be within 300mV of each other at all times; this is not re-
2. Vref ≤ 0.6 x VddQ; however, Vref may be ≥ VddQ provided that Vref ≤ 300mV.
3. Voltage on any I/O may not exceed voltage on VddQ.
C
quired when power is ramping down.
specification is not exceeded. In applications where the device’s ambient temper-
Vin, Vout
Symbol
VddQ
VddL
Ivref
Vdd
Ioz
Ii
Electrical Specifications – Absolute Ratings
27
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
–1.0
–0.5
–0.5
–0.5
–5
–5
–2
512Mb: x4, x8, x16 DDR2 SDRAM
Max
2.3
2.3
2.3
2.3
5
5
2
© 2004 Micron Technology, Inc. All rights reserved.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3
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