MT36LSDF12872Y-13ED1 Micron Technology Inc, MT36LSDF12872Y-13ED1 Datasheet - Page 14

• Manufacturer Part Number: MT36LSDF12872Y-13ED1
• Manufacturer: Micron Technology Inc

Specifications of MT36LSDF12872Y-13ED1

• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.466A
• Number Of Elements: 36
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 11:
Table 12:
Table 13:
PDF: 09005aef807da15c/Source: 09005aef80f69382
SDF36C64_128x72G.fm - Rev. E 10/05 EN
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All device banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All device banks
active after
Operating current: Burst mode; Continuous burst; READ or WRITE; All device
banks active
Auto refresh current
CS# = HIGH; CKE = HIGH
Self refresh current: CKE ≤ 0.2V
Parameter/Condition
Parameter
Operating current: Active mode; Burst = 2; READ or WRITE;
t
Standby current: Power-down mode; All device banks idle;
CKE = LOW
Standby current: Aactive mode; CKE = HIGH; CS# = HIGH; All device
banks active after
Operating current: Burst mode; Continuous burst; READ or WRITE; All
device banks active
Auto refresh current
CS# = HIGH; CKE = HIGH
Self refresh current: CKE ≤ 0.2V
Input capacitance: Address and command, S#
Input capacitance: CKE
Input capacitance: CK0
Input capacitance: CK1–CK3
Input capacitance: DQMB
Input/Output capacitance: DQ
RC =
RC =
t
t
RC (MIN)
RC (MIN)
t
RCD met; No accesses in progress
I
SDRAM components only; notes: 1, 5, 6, 11, 13; notes appear on pages 17 and 18; V
I
SDRAM components only; notes: 1, 5, 6, 11, 13; notes appear on pages 17 and 18; V
Capacitance
Note: 2; notes begin on page 17
DD
DD
Specifications and Conditions – 512MB
Specifications and Conditions – 1GB
t
RCD met; No accesses in progress
Note:
Note:
a - Value calculated as one module rank in this operating condition, and all other module
ranks in power-down (I
b - Value calculated reflects all module ranks in this operating condition.
a - Value calculated as one module rank in this operating condition, and all other module
ranks in power-down (I
b - Value calculated reflects all module ranks in this operating condition.
512MB, 1GB (x72, ECC, DR): 168-Pin SDRAM RDIMM
t
t
RFC =
RFC = 7.8125µs
DD
DD
2) mode.
t
t
2) mode.
RFC =
RFC = 15.625µs
t
14
RFC (MIN)
t
RFC (MIN)
Symbol
C
C
C
C
C
C
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
1
IO
I
I
I
I
1
2
3
4
A
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
Symbol
b
b
b
b
a
a
a
I
I
I
I
I
I
I
Min
DD
DD
DD
DD
DD
DD
DD
6
6
–
–
–
–
1
2
3
4
5
6
7
a
b
a
a
b
b
b
10,260
2,466
2,466
-13E
756
126
72
90
Electrical Specifications
Max
11,160
2,736
2,736
Max
-133
936
108
Typ
72
72
10
20
17
12
–
–
©2003 Micron Technology, Inc. All rights reserved.
2,286
2,466
9,720
-133
756
126
72
90
DD
DD
= V
= V
Units
Max
DD
DD
22.8
mA
mA
mA
mA
mA
mA
mA
12
Units
–
–
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
mA
mA
mA
mA
mA
mA
mA
19, 30, 31
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
Notes
Units
18, 19,
Notes
19, 30
19, 30
19, 30
30, 31
3, 18,
3, 12,
3, 18,
3, 12,
30
30
30
30
pF
pF
pF
pF
pF
pF
4
30
4